Synthesis and properties of c-axis oriented epitaxial MgB2MgB2 thin films

摘要

We report the growth and properties of epitaxial MgB2MgB2 thin films on (0001) Al2O3Al2O3 substrates. The MgB2MgB2 thin films were prepared by depositing boron films via radio-frequency (rf) magnetron sputtering, followed by a postdeposition anneal at 850 °C in magnesium vapor. X-ray diffraction and cross-sectional transmission electron microscopy reveal that the epitaxial MgB2MgB2 films are oriented with their c-axis normal to the (0001) Al2O3Al2O3 substrate with a 30° rotation in the (0001) plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2∥/Hc2⊥,Hc2∥/Hc2⊥, was about 3 at 25 K. The critical current densities at 4.2 and 20 K (at 1 T perpendicular magnetic field) are 5×1065×106 and 1×106 A/cm2,1×106A/cm2, respectively. The controlled growth of epitaxial MgB2MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2MgB2 and technological applications. © 2002 American Institute of Physics.